CRYSTAL MELT INTERFACE SHAPE OF CZOCHRALSKI-GROWN LARGE DIAMETER GERMANIUM-CRYSTALS

被引:5
|
作者
ROTH, M [1 ]
AZOULAY, M [1 ]
GAFNI, G [1 ]
MIZRACHI, M [1 ]
机构
[1] SOREQ NUCL RES CTR,IL-70600 YAVNE,ISRAEL
关键词
D O I
10.1016/S0022-0248(08)80004-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Crystal-melt interface shapes of 100 to 200 mm diameter <111〉 Ge grown by the Czochralski technique have been examined using the method of fast withdrawal from the melt. Initially, the interface shape is convex, then transforms gradually into a sigmoidal shape, becomes nearly planar at about one third of the final crystal length and, finally assumes a concave profile with progressively increasing curvature. The nearly planar interface has a double-facet structure, with an annular facet at the edge of the crystal in addition to the central (111) facet. Formation of the annular facet is accompanied by a giant oscillation of the pull rate when the maximum average pull rate is exceeded. Such oscillation is detrimental to crystal quality, since it introduces a region of high dislocation density. An average pull rate maximum of 2 cm/h has been found to allow for a smooth growth of 200 mm diameter crystals. The origin of the pull rate perturbation is discussed in terms of an instantaneous change in the equilibrium shape of the meniscus. The overall interface evolution is compared with theoretical results. © 1990, Elsevier Science Publishers B.V. (North-Holland). All rights reserved.
引用
收藏
页码:670 / 675
页数:6
相关论文
共 50 条
  • [1] FLOW MODE TRANSITION AND ITS EFFECTS ON CRYSTAL-MELT INTERFACE SHAPE AND OXYGEN DISTRIBUTION FOR CZOCHRALSKI-GROWN SI SINGLE-CRYSTALS
    WATANABE, M
    EGUCHI, M
    KAKIMOTO, K
    ONO, H
    KIMURA, S
    HIBIYA, T
    JOURNAL OF CRYSTAL GROWTH, 1995, 151 (3-4) : 285 - 290
  • [2] SHAPE OF GERMANIUM CRYSTALS GROWN BY CZOCHRALSKI METHOD
    LYUBALIN, MD
    MOKIEVSK.VA
    SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1969, 13 (04): : 635 - &
  • [3] TRANSPORT PHENOMENA NEAR THE INTERFACE OF A CZOCHRALSKI-GROWN CRYSTAL
    BALASUBRAMANIAM, R
    OSTRACH, S
    JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) : 263 - 281
  • [4] Enhanced automatic diameter control system of Czochralski-grown crystals
    Kochurikhin, VV
    Shimamura, K
    Fukuda, T
    CRYSTAL RESEARCH AND TECHNOLOGY, 1996, 31 (06) : 789 - 793
  • [5] Thermal warpage of large diameter Czochralski-grown silicon wafers
    Shimizu, Hirofumi
    Aoshima, Takaaki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (12): : 2315 - 2323
  • [6] CRACKING OF CZOCHRALSKI-GROWN CRYSTALS
    BRICE, JC
    JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) : 427 - 430
  • [7] Experimental and theoretical evidence for vacancy-clustering-induced large voids in Czochralski-grown germanium crystals
    Hens, S
    Vanhellemont, J
    Poelman, D
    Clauws, P
    Romandic, I
    Theuwis, A
    Holsteyns, F
    Van Steenbergen, J
    APPLIED PHYSICS LETTERS, 2005, 87 (06)
  • [8] THERMAL WARPAGE OF LARGE DIAMETER CZOCHRALSKI-GROWN SILICON-WAFERS
    SHIMIZU, H
    AOSHIMA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (12): : 2315 - 2323
  • [9] Parametric numerical study of dislocation density distribution in Czochralski-grown germanium crystals
    Sabanskis, Andrejs
    Dadzis, Kaspars
    Gradwohl, Kevin-Peter
    Wintzer, Arved
    Miller, Wolfram
    Juda, Uta
    Sumathi, R. Radhakrishnan
    Virbulis, Jaenis
    JOURNAL OF CRYSTAL GROWTH, 2023, 622
  • [10] Czochralski-Grown Silicon Crystals for Microelectronics
    Bukowski, A.
    ACTA PHYSICA POLONICA A, 2013, 124 (02) : 235 - 238