CHARGE TRANSPORT AND TRAPPING CHARACTERISTICS IN THIN NITRIDE OXIDE STACKED FILMS

被引：18
|
作者：
YOUNG, KK
HU, CM
OLDHAM, WG
机构：
[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期
关键词：
D O I：
10.1109/55.9294
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：616 / 618
页数：3
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