TRANSPORT PROPERTIES OF FIELD-EFFECT TRANSISTORS

被引：0
|
作者：
HESS, K
机构：
[1] UNIV VIENNA,INST ANGEW PHYS,A-1010 VIENNA,AUSTRIA
[2] LUDWIG BOLTZMANN INST FESTKORPERPHYS,WIEN,AUSTRIA
来源：
ACTA PHYSICA AUSTRIACA | 1977年 / 47卷 / 1-2期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：31 / 57
页数：27
相关论文
共 50 条
  • [41] Intrinsic transport properties of nanoporous graphene highly suitable for complementary field-effect transistors
    Li, Jing
    Delerue, Christophe
    2D MATERIALS, 2019, 6 (03):
  • [42] Coupling between Transport and Injection Properties of Pentacene Field-Effect Transistors with Different Morphologies
    Lee, Keanchuan
    Weis, Martin
    Taguchi, Dai
    Manaka, Takaaki
    Iwamoto, Mitsumasa
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
  • [43] Electrical transport properties in electroless-etched Si nanowire field-effect transistors
    Moon, Kyeong-Ju
    Choi, Ji-Hyuk
    Lee, Tae-Il
    Ham, Moon-Ho
    Maeng, Wan-Joo
    Hwang, Inchan
    Kim, Hyungjun
    Myoung, Jae-Min
    MICROELECTRONIC ENGINEERING, 2010, 87 (11) : 2407 - 2410
  • [44] Imaging Ultrafast Carrier Transport in Nanoscale Field-Effect Transistors
    Son, Byung Hee
    Park, Jae-Ku
    Hong, Jung Taek
    Park, Ji-Yong
    Lee, Soonil
    Ahn, Yeong Hwan
    ACS NANO, 2014, 8 (11) : 11361 - 11368
  • [45] Quasi-Ballistic Transport in Nanowire Field-Effect Transistors
    Gnani, Elena
    Gnudi, Antonio
    Reggiani, Susanna
    Baccarani, Giorgio
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) : 2918 - 2930
  • [46] Electronic transport characteristics in silicon nanotube field-effect transistors
    Shan, Guangcun
    Wang, Yu
    Huang, Wei
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2011, 43 (09): : 1655 - 1658
  • [47] An atomistic quantum transport solver with dephasing for field-effect transistors
    Raza, Hassan
    Kan, Edwin C.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2008, 7 (03) : 423 - 426
  • [48] An atomistic quantum transport solver with dephasing for field-effect transistors
    Hassan Raza
    Edwin C. Kan
    Journal of Computational Electronics, 2008, 7 : 423 - 426
  • [49] Thermionic and tunneling transport mechanisms in graphene field-effect transistors
    Ryzhii, Victor
    Ryzhii, Maxim
    Otsuji, Taiichi
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (07): : 1527 - 1533
  • [50] Organic field-effect transistors for spin-polarized transport
    Michelfeit, M.
    Schmidt, G.
    Geurts, J.
    Molenkamp, L. W.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (03): : 656 - 663
12345