共 50 条
- [1] RADIATIVE CAPTURE OF CARRIERS BY IMPURITY ATOMS IN SILICON AND GERMANIUMSOVIET PHYSICS-SOLID STATE, 1964, 6 (01): : 13 - 17POKROVSKII, YESVISTUNOVA, KI
- [2] MOSSBAUER STUDY OF IMPURITY ATOMS OF TIN IN SILICON AND GERMANIUMFIZIKA TVERDOGO TELA, 1979, 21 (04): : 1236 - 1239SEREGIN, PPBAKHCHIEVA, SRKEKUA, MGPETROV, AV
- [3] Sensitivity of amorphous silicon-germanium solar cells to oxygen impurity atomsAPPLIED PHYSICS LETTERS, 2003, 83 (04) : 683 - 685Ganguly, GCarlson, DE
- [4] BINDING ENERGY OF A CARRIER WITH A NEUTRAL IMPURITY ATOM IN GERMANIUM AND IN SILICONJETP LETTERS-USSR, 1971, 14 (05): : 185 - +GERSHENZON, EIGOLTSMAN, GNMELNIKOV, AP
- [5] THE INTERACTION OF IMPURITY ATOMS WITH DISLOCATIONS IN GERMANIUMACTA METALLURGICA, 1954, 2 (02): : 352 - 354KURTZ, ADKULIN, SA
- [6] A STUDY OF TIN IMPURITY ATOMS IN SILICON, GERMANIUM, AND SILICON-GERMANIUM SOLID-SOLUTIONS BY MEANS OF MOSSBAUER-SPECTROSCOPYPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1981, 63 (01): : 23 - 30BAKHCHIEVA, SRKEKUA, MGSEREGIN, PP
- [7] IMPURITY DIFFUSION IN GERMANIUM AND SILICONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (03) : C65 - C66TANENBAUM, M
- [8] SILICON IMPURITY STATES IN GERMANIUMSOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 565 - 566BALAGUROV, EAPETROV, ALKHABAROV, EN
- [9] IMPURITY CLOUDS IN SILICON AND GERMANIUMJOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 939 - 942VORONKOV, VVVORONKOVA, GIGOLOVINA, VNZUBOV, BVKALINUSHKIN, VPMURINA, TMPROKHOROV, AM
- [10] EFFECT OF DEFORMATION ON THE HOLE ENERGY SPECTRUM OF GERMANIUM AND SILICONSOVIET PHYSICS-SOLID STATE, 1960, 1 (11): : 1502 - 1517PIKUS, GEBIR, GL