ON THE QUESTION OF THE ENERGY SPECTRUM OF CERTAIN IMPURITY ATOMS IN GERMANIUM AND SILICON

被引：0

|

作者：

VITOVSKII, NA

LUKIRSKII, DP

MASHOVETS, TV

RYVKIN, SM

机构：

来源：

SOVIET PHYSICS-SOLID STATE | 1962年 / 4卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：599 / 600

页数：2

相关论文

共 50 条

[31] IMPURITY EFFECTS IN AMORPHOUS-GERMANIUM AND SILICON
ALZAMIR, J
COLLVER, MM
SOLID STATE COMMUNICATIONS, 1979, 30 (07) : 425 - 428
[32] IMPURITY SCATTERING OF WARM HOLES IN GERMANIUM AND SILICON
TSCHULENA, GR
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (06) : 1219 - +
[33] IMPURITY CONDUCTION IN DUFFUSED GERMANIUM AND SILICON LAYERS
BLAKEMORE, JS
OLSON, RO
HERDER, TH
SOLID-STATE ELECTRONICS, 1966, 9 (07) : 673 - +
[34] SHALLOW IMPURITY SURFACE STATES IN SILICON AND GERMANIUM
SCHECHTER, D
ROMERO, HV
BELL, RJ
SURFACE SCIENCE, 1968, 11 (02) : 352 - +
[35] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON
TRUMBORE, FA
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01): : 205 - 233
[36] IMPURITY-CONCENTRATION DEPENDENCE OF THE THERMAL IONIZATION ENERGY OF GALLIUM ATOMS IN GERMANIUM CRYSTALS.
Veliev, Z.A.
Shikin, V.B.
Soviet physics. Semiconductors, 1984, 18 (11): : 1293 - 1294
[37] IMPURITY ABSORPTION AND ENERGY-SPECTRUM OF LOCAL CENTERS IN ZINC GERMANIUM DIPHOSPHIDE CRYSTALS
GORBAN, IS
GRISHCHUK, VV
TREGUB, IG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (05): : 567 - 568
[38] EFFECT OF DEFORMATION ON THE ENERGY SPECTRUM AND THE ELECTRICAL PROPERTIES OF IMPERFECT GERMANIUM AND SILICON
PIKUS, GE
BIR, GL
SOVIET PHYSICS-SOLID STATE, 1959, 1 (01): : 136 - 138
[39] Strained-silicon MOSFET process technology-control of impurity and germanium atoms at the hetero-interface
Sugii, N
Kimura, Y
Kimura, S
Irieda, S
Morioka, J
Inada, T
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 8 (1-3) : 89 - 95
[40] IMPURITY ATOMS IN GERMANIUM AS RECOMBINATION CENTERS FOR PRIMARY RADIATION DEFECTS
BELOBORODKO, BA
VASILEVA, ED
EMTSEV, VV
MASHOVETS, TV
TROPP, EA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11): : 1317 - 1318

← 1 2 3 4 5 →