Vacancy model for substitutional Ni-, Pd-, Pt-, and Au-0 in silicon

被引：34
|
作者：
Watkins, GD
Williams, PM
机构：
[1] Department of Physics, Lehigh University, Bethlehem, PA 18015
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.52.16575
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The vacancy model for the electronic structure in silicon of substitutional transition elements near the end of the 3d, 4d, and 5d series is described and a simplified theoretical treatment for their paramagnetic properties is presented. It is concluded that the complete set of such impurities for which experimental information is available-Ni-s(-), Pd-s(-), Pt-s(-), and Au-s(0)-are all well described by the model. In making this argument, an alternative, physically more reasonable, analysis is proposed for the electron paramagnetic resonance and electron-nuclear double resonance results on Ni-s(-) and Pd-s(-) [Solid State Commun. 80, 439 (1991)], which were originally interpreted as conflicting with the model.
引用
收藏
页码：16575 / 16580
页数：6
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