Vacancy model for substitutional Ni-, Pd-, Pt-, and Au-0 in silicon

The vacancy model for the electronic structure in silicon of substitutional transition elements near the end of the 3d, 4d, and 5d series is described and a simplified theoretical treatment for their paramagnetic properties is presented. It is concluded that the complete set of such impurities for which experimental information is available-Ni-s(-), Pd-s(-), Pt-s(-), and Au-s(0)-are all well described by the model. In making this argument, an alternative, physically more reasonable, analysis is proposed for the electron paramagnetic resonance and electron-nuclear double resonance results on Ni-s(-) and Pd-s(-) [Solid State Commun. 80, 439 (1991)], which were originally interpreted as conflicting with the model.