CONTAMINATION OF SILICON OXIDE FILMS WITH NA ATOMS DUE TO THERMAL OXIDATION OF SILICON

被引：1
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作者：
NAGASIMA, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 08期
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D O I：
10.1143/JJAP.10.1119
中图分类号：
O59 [应用物理学];
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页码：1119 / &
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