METALLIZATION OF MO-CLUSTER COMPOUND GA0.5MO2S4 AT 38 GPA

被引：4
|
作者：
ASANO, M [1 ]
TANAKA, R [1 ]
ENDO, S [1 ]
WADA, S [1 ]
NOGUCHI, S [1 ]
OKUDA, K [1 ]
机构：
[1] UNIV OSAKA PREFECTURE,DEPT ELECTR,SAKAI,OSAKA 591,JAPAN
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1990年 / 59卷 / 06期
关键词：
Ga0.5Mo2S4; high pressure; metallization; Mo-cluster;
D O I：
10.1143/JPSJ.59.2179
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The electric resistance of Ga0.5Mo2S4 containing tetrahedral Mo-clusters was measured at high pressure up to 42 GPa and low temperature down to 2 K. The temperature coefficient of the resistance changed from negative to positive at 38 GPa, which indicates that metallization was induced with vanishing of the energy gap. © 1990, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.
引用
收藏
页码：2179 / 2182
页数：4
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