OBSERVATIONS ON THE DEVELOPMENT OF SECONDARY DEFECTS IN HEAVILY DAMAGED ION-IMPLANTED (100) AND (111) SILICON

被引：6
|
作者：
SESHAN, K [1 ]
机构：
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DEPT MAT SCI & MINERAL ENGN,DIV MAT & MOLEC RES,BERKELEY,CA 94720
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1979年 / 40卷 / 1-2期
关键词：
D O I：
10.1080/00337577908234488
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：29 / 35
页数：7
相关论文
共 50 条
  • [31] {111} defects in 1-MeV-silicon-ion-implanted silicon
    Chou, CT
    Cockayne, DJH
    Zou, J
    Kringhoj, P
    Jagadish, C
    PHYSICAL REVIEW B, 1995, 52 (24): : 17223 - 17230
  • [32] RF PLASMA MODIFICATION OF HEAVILY DESTROYED ION-IMPLANTED SUBSURFACE SILICON LAYERS
    LYSENKO, VS
    NAZAROV, AN
    ZARITSKII, IM
    SERFOZO, G
    BATTISTIG, G
    GYULAI, J
    DOZSA, L
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1989, 115 (01): : 75 - 80
  • [33] SECONDARY-ELECTRON EMISSION FROM ION-IMPLANTED SILICON
    KONRAD, GT
    JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1996 - &
  • [34] LATTICE-DEFECTS AND STRAINS REMAINING IN HEAVILY ION-IMPLANTED SILICON LAYERS AFTER HIGH-TEMPERATURE ANNEALING
    TAMURA, M
    YOSHIHIRO, N
    TOKUYAMA, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C118 - C118
  • [35] VOIDS IN ION-IMPLANTED SILICON
    ROMANOV, SI
    SMIRNOV, LS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 121 - 126
  • [36] ION-IMPLANTED ARSENIC IN SILICON
    LARSEN, AN
    CHRISTENSEN, B
    CHRISTENSEN, PH
    SHIRYAEV, SY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701
  • [37] Development of certified reference materials of ion-implanted dopants in silicon for calibration of secondary ion mass spectrometers
    Simons, D. S.
    Downing, R. G.
    Lamaze, G. P.
    Lindstrom, R. M.
    Greenberg, R. R.
    Paul, R. L.
    Schiller, S. B.
    Guthrie, W. F.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (04): : 1365 - 1375
  • [38] STRUCTURE OF ION-IMPLANTED SILICON
    MOSS, SC
    FLYNN, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (12): : 1392 - &
  • [39] ION-IMPLANTED SILICON TRANSISTORS
    MARSHALL, S
    SOLID STATE TECHNOLOGY, 1974, 17 (08) : 27 - 27
  • [40] Ion Beam Defect Engineering——Controlling of Secondary Defect in Ion-implanted Silicon
    卢武星
    R.J.Schreutelkamp
    J.R.Liefting
    F.W.Saris
    Progress in Natural Science, 1994, (03) : 74 - 80
12345