OBSERVATIONS ON THE DEVELOPMENT OF SECONDARY DEFECTS IN HEAVILY DAMAGED ION-IMPLANTED (100) AND (111) SILICON

被引：6
|
作者：
SESHAN, K [1 ]
机构：
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DEPT MAT SCI & MINERAL ENGN,DIV MAT & MOLEC RES,BERKELEY,CA 94720
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1979年 / 40卷 / 1-2期
关键词：
D O I：
10.1080/00337577908234488
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：29 / 35
页数：7
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