DYNAMICS OF ELECTRON-TUNNELING FROM PHOSPHORUS ATOMS TO THE CONDUCTION-BAND OF SILICON

被引：0
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作者：
DARGIS, AY
ZHURAUSKAS, SV
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 02期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：235 / 236
页数：2
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