DIELECTRIC-PROPERTIES OF SPUTTERED SRTIO3 FILMS

被引：167
|
作者：
CHRISTEN, HM
MANNHART, J
WILLIAMS, EJ
GERBER, C
机构：
[1] IBM Research Division, Zurich Research Laboratory
来源：
PHYSICAL REVIEW B | 1994年 / 49卷 / 17期
关键词：
D O I：
10.1103/PhysRevB.49.12095
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The dielectric properties of [100]-oriented epitaxial SrTiO3 films as used in high-T(c) heterostructures have been studied as a function of temperature and applied electric field by using in situ grown heterostructures (Mg/SrTiO3/SrTiO3:Nb and Au/YBa2Cu3O7-x/SrTiO3/SrTiO3:Nb). The dielectric behavior of these films is characterized by a rather low sample capacitance as compared to bulk single-crystal values and by occurrences of maxima in the capacitance-voltage and capacitance-temperature curves. The maximum attainable polarization was found to be 80 mC/m2 at 4.2 K. Complementary measurements on single crystals of SrTiO3 and SrTiO3:Nb reveal that the behavior of these SrTiO3 thin films can be understood from the bulk properties with additional strong charge trapping at the film-substrate interface.
引用
收藏
页码：12095 / 12104
页数：10
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