ROOM-TEMPERATURE SCANNING PHOTOLUMINESCENCE FOR MAPPING THE LIFETIME AND THE DOPING DENSITY IN COMPOUND SEMICONDUCTORS

被引：7
|
作者：
KRAWCZYK, SK
NUBAN, MF
机构：
[1] Laboratoire d'Electronique (URA CNRS No. 848), Ecole Centrale de Lyon, 69131 Ecully Cedex
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期
关键词：
SEMICONDUCTORS; I-SPL; RT PHOTOLUMINESCENCE;
D O I：
10.1016/0921-5107(94)90104-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It is demonstrated that room-temperature spectrally integrated scanning photoluminescence (I-SPL) measurements can provide direct information on the spatial uniformity of the non-radiative lifetime and of the doping density in compound semiconductor substrates. This new experimental approach is based on I-SPL measurements performed at different excitation levels. The data obtained are treated using a simple theoretical model and the software developed in this work.
引用
收藏
页码：452 / 456
页数：5
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