INFLUENCE OF IN ON SI LOCAL VIBRATIONAL-MODES IN INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.12)

Local vibrational modes (LVM) of Si in substitutional sites have been observed by resonant Raman spectroscopy in highly doped (≥8×10 18 cm-3) InxGa1-xAs layers, either relaxed or under strain, on [100] GaAs substrates. The peak frequency ωLVM of the Si on Ga site (SiGa) LVM in unstrained samples shifts to lower values with increasing In content. For x≤0.10 this shift is clearly higher than expected from a linear interpolation between the measured values in the binaries. The comparison between the SiGa peak frequency measured in both a full strained layer and a relaxed layer with similar composition provides a rough determination of the deformation potentials for the SiGaLVM in these layers: q/ω2 LVM=-2.7±1 and p/ω2 LVM=-2. 5±1. As the In content becomes higher the width of the SiGa peak increases much more than that of the GaAs-like longitudinal optical-phonon peak, revealing the splitting due to the loss of local symmetry introduced by the In. New calibration factors for the Si-defect concentrations have been deduced, which allow estimation of the solubility limit for the Si incorporation in substitutional positions, which ranges from 2.3×1019 to 2.6×1019 cm-3 for the layers at the growth conditions used. The analysis of the integrated intensity of the LVM Raman peaks indicates that the degree of electrical compensation is clearly reduced for increasing In up to x≤0.05, due to both an increase of the solubility limit for Si in these layers and a saturation or slight reduction of the Si As-related defect concentrations. This conclusion is also supported by Hall and plasmon measurements. © 1994 American Institute of Physics.