AVALANCHE BREAKDOWN VOLTAGE OF MULTIPLE EPITAXIAL PN JUNCTIONS

被引：6

作者：

SUNSHINE, RA ^{[1
]}

ASSOUR, J ^{[1
]}

机构：

[1] RCA LABS,DAVID SARNOFF RES CTR,PRINCETON,NJ 08540

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期

关键词：

D O I：

10.1016/0038-1101(73)90183-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：459 / &

共 50 条

[21] A DOUBLE ETCHED PROFILE FOR IMPROVED BREAKDOWN VOLTAGE IN PN-JUNCTIONS - THEORY AND PRACTICE
PLUMPTON, AT
HAYDOCK, KJ
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (06): : 291 - 294
[22] SIMPLE RELATIONSHIP BETWEEN THE BREAKDOWN VOLTAGE, CONCENTRATION, AND JUNCTION DEPTH FOR DIFFUSED PN JUNCTIONS
RANG, T
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (01): : K117 - K119
[23] AVALANCHE BREAKDOWN VOLTAGE OF HYPER-ABRUPT SILICON P-N-JUNCTIONS
GUPTA, AK
TYAGI, MS
SOLID-STATE ELECTRONICS, 1976, 19 (04) : 342 - 344
[24] TEMPERATURE-DEPENDENCE OF AVALANCHE BREAKDOWN VOLTAGE IN SI P-N-JUNCTIONS
KAJIYAMA, K
KANBE, H
JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2744 - 2745
[25] SURFACE BREAKDOWN EFFECTS IN SILICON PN JUNCTIONS
BEMROSE, CR
HOWARD, NR
SURFACE SCIENCE, 1965, 3 (02) : 109 - &
[26] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
SUNOHARA, Y
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
[27] AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE PARA JUNCTIONS
LOGAN, RA
CHYNOWETH, AG
COHEN, BG
PHYSICAL REVIEW, 1962, 128 (06): : 2518 - &
[28] AVALANCHE BREAKDOWN AND MULTIPLICATION IN SILICON PIN JUNCTIONS
OGAWA, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (07) : 473 - &
[29] High-voltage SiC pn diodes with avalanche breakdown fabricated by aluminum or boron ion implantation
Negoro, Y
Miyamoto, N
Kimoto, T
Matsunami, H
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1273 - 1276
[30] CALCULATION OF THE BREAKDOWN VOLTAGE OF PLANAR PN-JUNCTIONS WITH MULTI-STEP FIELD PLATES
FALCK, E
GERLACH, W
AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1989, 43 (05): : 328 - 334

← 1 2 3 4 5 →