GROWTH AND EPITAXY OF YB SILICIDES ON SI(111)

被引：24
|
作者：
WIGREN, C
ANDERSEN, JN
NYHOLM, R
KARLSSON, UO
机构：
[1] MAX-LAB, Lund University, Lund
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 03期
关键词：
D O I：
10.1116/1.577549
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Yb silicides have been grown epitaxially on the Si(111) surface using solid-state epitaxy with annealing to 400-degrees-C. The amount of deposited Yb was varied from parts of a monolayer to films being about 40 monolayer thick. Auger- and photoelectron spectroscopy showed that Si segregates into the Yb overlayer at room temperature and that a strong reaction occurs during annealing to 400-degrees-C leading to the formation of thick silicides. The epitaxial silicides showed a 1 x 1 or a unroofed-radical 3 x unroofed-radical 3 low-energy electron diffraction pattern depending on the detailed preparation procedure. The composition of the silicide was found to be YbSi2-x.
引用
收藏
页码：1942 / 1945
页数：4
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