CARBONIZATION PROCESS FOR LOW-TEMPERATURE GROWTH OF 3C-SIC BY THE GAS-SOURCE MOLECULAR-BEAM EPITAXIAL METHOD

Using the carbonization process, single-crystalline SiC films were grown at substrate temperature (Tsub) in the range of 750-1050°C by the gas-source molecular-beam epitaxial method. This process was performed by using C2H4 gas and a special growth method in which the temperature was raised at a predetermined rate (RT) during growth. To realize the growth of single-crystalline carbonized films, it was found that a C2H4 gas pressure PC2H4= 8×10-5 Torr and rising rate RT=25-25/3°C/min were necessary. After the carbonization process, essential growth of SiC films using SiHCl3 and C2H4 gases in the range of gas pressure ratios PSiHCl3/PC2H4= (1)/(3) -5 (PSiHCl3=1-5×10-5 Torr) at Tsub= 1000°C was performed. In these all experimental ranges, single-crystalline 3C-SiC films could be grown.