CHANNELING OF BORON IONS INTO SILICON

被引：13
|
作者：
LECROSNIER, D [1 ]
PAUGAM, J [1 ]
GALLOU, J [1 ]
机构：
[1] CTR NATL ETUD TELECOMMUN,LANNION,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 07期
关键词：
D O I：
10.1063/1.89384
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：323 / 325
页数：3
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