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- [1] INVESTIGATION OF PHOTOELECTRIC PROPERTIES OF N-I-N STRUCTURES MADE OF HIGH-RESISTIVITY GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 951 - 952
- [3] INVESTIGATION OF DIODE STRUCTURES MADE OF SEMIINSULATING GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (07): : 844 - 845
- [4] SEMICONDUCTOR PHOTOGRAPHIC SYSTEM BASED ON HIGH-RESISTIVITY GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (09): : 1585 - 1587
- [5] ON SOME PECULIARITIES OF THE OXYGEN CHARGE STATES IN HIGH-RESISTIVITY GALLIUM-ARSENIDE VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1986, 27 (06): : 88 - 90
- [6] OBSERVATION OF IMPURITY STATES IN HIGH-RESISTIVITY GALLIUM-ARSENIDE BY THE PHOTOREFLECTION METHOD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (07): : 797 - 798
- [9] SHUBNIKOV-DEHAAS OSCILLATIONS IN COMPENSATED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 751 - 754
- [10] NOISE PROPERTIES OF DIODE STRUCTURES MADE OF CHROMIUM-COMPENSATED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1504 - &