DUAL SPECIES ION-IMPLANTATION IN GAAS

被引：9

作者：

INADA, T ^{[1
]}

KATO, S ^{[1
]}

OHKUBO, T ^{[1
]}

HARA, T ^{[1
]}

机构：

[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI,KANAGAWA 214,JAPAN

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 48卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209235

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：91 / 96

页数：6

共 50 条

[11] ION-IMPLANTATION FOR GAAS IC FABRICATION
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