DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON

被引：117
|
作者：
HU, SM [1 ]
机构：
[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533
来源：
APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 02期
关键词：
D O I：
10.1063/1.89580
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：53 / 55
页数：3
相关论文
共 50 条
  • [1] NUMBER OF OXYGEN-ATOMS IN A THERMAL DONOR IN SILICON
    SCHRODER, DK
    CHEN, CS
    KANG, JS
    SONG, XD
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (01) : 136 - 141
  • [2] CLUSTERING OF OXYGEN-ATOMS AROUND CARBON IN SILICON
    FRAUNDORF, P
    FRAUNDORF, GK
    SHIMURA, F
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4049 - 4055
  • [3] PHENOMENON OF SILICON INTERNODAL ATOMS CREATED BY ELECTRON-IRRADIATION ON OXYGEN-ATOMS
    MILEVSKII, LS
    SMOLSKII, IL
    TKACHEVA, TM
    DOKLADY AKADEMII NAUK SSSR, 1975, 225 (04): : 815 - &
  • [4] SOURCE OF OXYGEN-ATOMS
    TOUZEAU, M
    VIALLE, M
    POINTU, AM
    PAGNON, D
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1990, 45 (252): : 197 - 198
  • [5] THE PINNING EFFECT OF PHOSPHORUS ON DISLOCATION CORES IN SILICON
    HEGGIE, M
    JONES, R
    UMERSKI, A
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 125 - 128
  • [6] EFFECT OF QUARTZ SURFACE DEHYDROXYLATION ON RECOMBINATION OF OXYGEN-ATOMS
    VOROBEV, VP
    KOVTUN, VV
    KUDRYAVTSEV, NN
    KHIMICHESKAYA FIZIKA, 1990, 9 (12): : 1708 - 1712
  • [7] EFFECT OF ENERGETIC OXYGEN-ATOMS ON NEUTRAL DENSITY MODELS
    ROHRBAUGH, RP
    NISBET, JS
    JOURNAL OF GEOPHYSICAL RESEARCH, 1973, 78 (28): : 6768 - 6772
  • [8] REACTION OF OXYGEN-ATOMS WITH OLEFINS
    CVETANOVIC, RJ
    SINGLETON, DL
    REVIEWS OF CHEMICAL INTERMEDIATES, 1984, 5 (02): : 183 - 226
  • [9] THE REACTION OF OXYGEN-ATOMS WITH METHYLACETYLENE
    ALEKSANDROV, EN
    DUBROVINA, IV
    KOZLOV, SN
    KINETICS AND CATALYSIS, 1981, 22 (02) : 394 - 396
  • [10] REACTION OF OXYGEN-ATOMS WITH DIBORANE
    HAND, CW
    DERR, LK
    INORGANIC CHEMISTRY, 1974, 13 (02) : 339 - 342
12345