EFFECTS OF PLASMA POTENTIAL ON DIAMOND DEPOSITION AT LOW-PRESSURE USING MAGNETOMICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION

被引：3
|
作者：
WEI, J
KAWARADA, H
SUZUKI, J
MA, JS
HIRAKI, A
机构：
[1] WASEDA UNIV, SCH SCI & ENGN, SHINJUKU, TOKYO 165, JAPAN
[2] SHIMADZU CO, KYOTO 615, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 06期
关键词：
DIAMOND FILM; CVD; ECR; PLASMA POTENTIAL; POTENTIAL DIFFERENCE;
D O I：
10.1143/JJAP.30.1279
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
At the low pressure of 0.1 Torr, we have controlled the plasma potential during diamond deposition for the first time using a magneto-microwave plasma chemical vapor deposition (CVD) system. The potential difference between plasma and substrate is an important factor for fabrication of diamond at this pressure. By lowering the plasma potential, high-quality diamond films have been formed. The films were evaluated by scanning electron microscope (SM) imaging, electron diffraction and Raman spectroscopy.
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页码：1279 / 1280
页数：2
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