共 50 条
- [42] Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor ELEKTROTEHNISKI VESTNIK-ELECTROCHEMICAL REVIEW, 2008, 75 (03): : 97 - 104
- [43] Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor Elektrotehniski Vestnik/Electrotechnical Review, 2008, 75 (03): : 97 - 104
- [44] INGAASP/INP HETERO JUNCTION BIPOLAR-TRANSISTOR WITH HIGH-CURRENT GAIN JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L504 - L506
- [45] Measurement and optimization of Gummel-Poon model dc parameters of bipolar junction transistor PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 558 - 561
- [46] Base Transit Time of a Bipolar Junction Transistor Considering Majority-carrier Current PROCEEDINGS OF ICECE 2008, VOLS 1 AND 2, 2008, : 133 - +
- [49] A bond graph model of the bipolar junction transistor PROCEEDINGS OF THE 1999 INTERNATIONAL CONFERENCE ON BOND GRAPH MODELING AND SIMULATION (ICBGM'99), 1999, 31 (01): : 344 - 349
- [50] Processing sequence for a PureB bipolar junction transistor 2020 43RD INTERNATIONAL CONVENTION ON INFORMATION, COMMUNICATION AND ELECTRONIC TECHNOLOGY (MIPRO 2020), 2020, : 13 - 16