INAS GA1-XINXSB STRAINED-LAYER SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：30
|
作者：
CHOW, DH [1 ]
MILES, RH [1 ]
SODERSTROM, JR [1 ]
MCGILL, TC [1 ]
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1116/1.584985
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：710 / 714
页数：5
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