共 50 条
- [41] Influence of separate confinement heterostructure layer on carrier distribution in InGaAsP laser diodes with nonidentical multiple quantum wells Lin, C.-F., 1600, Japan Society of Applied Physics (43):
- [42] FREQUENCY CHIRP IN GAAS/GAA1AS LASER-DIODES WITHOUT LATERAL CARRIER CONFINEMENT AEU-ARCHIV FUR ELEKTRONIK UND UBERTRAGUNGSTECHNIK-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 1988, 42 (04): : 254 - 256
- [43] Excess current carrier distribution in the base region of the semiconductor multi-junction structure Electron Technol., 2007, (1-8):
- [46] Time-resolved carrier and phonon dynamics in the near surface depletion region of GaAs (100) ULTRAFAST PHENOMENA IN SEMICONDUCTORS VI, 2002, 4643 : 69 - 76
- [49] Carrier Transport in the Multi Quantum Well Region of III-Nitride Light Emitting Diodes 17TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES NUSOD 2017, 2017, : 91 - 92
- [50] Improved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells cladding MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF HETEROEPITAXIAL SEMICONDUCTOR THIN FILMS, 2000, 618 : 213 - 218