THE ADSORPTION OF O2 ON FESI SURFACES

被引:0
|
作者
HSU, CC
DING, SA
MA, MS
WU, JX
LIU, XM
JI, MR
机构
[1] CHINESE ACAD SCI, INST SEMICOND, BEIJING, PEOPLES R CHINA
[2] UNIV SCI & TECHNOL CHINA, STRUCT RES LAB, HEFEI, PEOPLES R CHINA
关键词
D O I
暂无
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The initial adsorption stages and the interaction of oxygen on FeSi surfaces have been studied as a function of exposure and annealing temperature using a variety of techniques including HREELS, AES, LEED, XPS and UPS. O2 was found to adsorb dissociatively on the FeSi surfaces at room temperature. The whole adsorption process can be divided into four stages. Heating promotes the oxidation of Si, and a thin SiO2 overlayer is formed on the surface when annealed at 450-degrees-C, while all FeOx species are reduced. Models for adsorbed atomic O on the FeSi(100) surface exposed to different oxygen exposures have been put forward to account for the observed experimental results.
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页码:1022 / 1031
页数:10
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