user

ON THE NATURE OF THE DEFECT REVERSE ANNEALING IN ION-IMPLANTED SILICON

被引：3
|
作者：
DVURECHENSKY, AV
RYAZANTSEV, IA
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 46卷 / 3-4期
关键词：
D O I：
10.1080/00337578008209161
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：129 / 132
页数：4
相关论文
共 50 条
  • [21] Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing
    Ortiz, CJ
    Cristiano, F
    Colombeau, B
    Claverie, A
    Cowern, NEB
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 114 : 184 - 192
  • [22] Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing
    Ulyashin, A. G.
    Christensen, J. S.
    Svensson, B. G.
    Koegler, R.
    Skorupa, W.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 253 (1-2): : 126 - 129
  • [23] Excimer laser annealing of ion-implanted silicon: Dopant activation, diffusion and defect formation
    Monakhov, E. V.
    Svensson, B. G.
    La Magna, A.
    Alippi, P.
    Italia, M.
    Privitera, V.
    Fortunat, G.
    Mariucci, L.
    Tumisto, F.
    Kuitunen, K.
    15TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS - RTP 2007, 2007, : 31 - +
  • [24] THEORETICAL INVESTIGATION OF LASER ANNEALING OF ION-IMPLANTED SILICON
    WANG, JC
    WOOD, RF
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 393 - 393
  • [25] Defect annealing in ion implanted silicon carbide
    L. Calcagno
    M. G. Grimaldi
    P. Musumeci
    Journal of Materials Research, 1997, 12 : 1727 - 1733
  • [26] Defect annealing in ion implanted silicon carbide
    Calcagno, L
    Grimaldi, MG
    Musumeci, P
    JOURNAL OF MATERIALS RESEARCH, 1997, 12 (07) : 1727 - 1733
  • [27] SELF ANNEALING OF ION-IMPLANTED SILICON - SUGGESTION FOR AN EXPERIMENT
    MERLI, PG
    ZIGNANI, F
    RADIATION EFFECTS LETTERS, 1980, 50 (3-6): : 115 - 118
  • [28] LASER ANNEALING STUDIES ON ION-IMPLANTED IRON IN SILICON
    DAMGAARD, S
    ORON, M
    PETERSEN, JW
    PETRIKIN, YV
    WEYER, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 59 (01): : 63 - 67
  • [29] ANNEALING PROPERTIES OF ION-IMPLANTED PARANORMAL JUNCTIONS IN SILICON
    MICHEL, AE
    FANG, FF
    PAN, ES
    JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 2991 - 2996
  • [30] SELF ANNEALING OF ION-IMPLANTED SILICON - SUGGESTION FOR AN EXPERIMENT
    MERLI, PG
    ZIGNANI, F
    RADIATION EFFECTS LETTERS, 1980, 57 (1-2): : 59 - 62
12345