user

PHONON-DRAG EFFECT IN GAAS-ALGAAS HETEROSTRUCTURES BY MONOCHROMATIC PHONONS

被引：3
|
作者：
LEGA, A [1 ]
KARL, H [1 ]
DIETSCHE, W [1 ]
FISCHER, A [1 ]
PLOOG, K [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
来源：
SURFACE SCIENCE | 1990年 / 229卷 / 1-3期
关键词：
D O I：
10.1016/0039-6028(90)90848-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The absorption of monochromatic acoustical phonons was observed by measuring the phonon-drag voltage along a two-dimensional electron gas caused in the process. From the data the existence of the 2kF cut-off is apparent which is a signature of the electron-phonon interaction in these systems. © 1990.
引用
收藏
页码：116 / 118
页数：3
相关论文
共 50 条
  • [41] EFFECT OF PHONON-DRAG ON ELECTRICAL CONDUCTIVITY IN COPPER AND ITS ALLOYS
    BHANDARI, CM
    PHYSICA, 1968, 40 (01): : 30 - &
  • [42] The phonon-drag effect in low mobility gallium nitride epilayers
    Lehmann, D
    Kent, AJ
    Stanton, NM
    Akimov, AV
    Cavill, SA
    Jasiukiewicz, C
    Cheng, TS
    Foxon, CT
    PHYSICA B-CONDENSED MATTER, 2002, 316 : 110 - 113
  • [43] Phonon-drag effect in 2D hole gases
    Lehmann, D
    Jasiukiewicz, C
    Strickland, RE
    Strickland, KR
    Kent, AJ
    Paszkiewicz, T
    PHYSICA B-CONDENSED MATTER, 1996, 219-20 : 25 - 27
  • [44] Effects of weak localization and electron-electron interaction in GaAs-AlGaAs heterostructures
    Bumai Yu.A.
    Lukashevich M.G.
    Skripka D.A.
    Gobsch G.
    Goldhahn R.
    Stein N.
    Journal of Applied Spectroscopy, 2004, 71 (1) : 77 - 82
  • [45] Ultra-shallow undoped 2DEGs in GaAs-AlGaAs heterostructures
    Das Gupta, K.
    Mak, W. Y.
    Sfigakis, F.
    Beere, H. E.
    Farrer, I.
    Ritchie, D. A.
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [46] Quantum wire fabrication from compensating-layer GaAs-AlGaAs heterostructures
    Kähler, D
    Kunze, U
    Reuter, D
    Wieck, AD
    MICROELECTRONIC ENGINEERING, 2002, 61-2 : 619 - 623
  • [47] CYCLOTRON-RESONANCE STUDIES OF SCREENING AND POLARON EFFECTS IN GAAS-ALGAAS HETEROSTRUCTURES
    SEIDENBUSCH, W
    LINDEMANN, G
    LASSNIG, R
    EDLINGER, J
    GORNIK, G
    SURFACE SCIENCE, 1984, 142 (1-3) : 375 - 379
  • [48] FABRICATION OF GAAS-ALGAAS NANO-HETEROSTRUCTURES BY THROUGH-UHV PROCESSING
    KATAYAMA, Y
    ISHIKAWA, T
    GOTO, S
    MORISHITA, Y
    NOMURA, Y
    LOPEZ, M
    TANAKA, N
    MATSUYAMA, I
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 433 - 440
  • [49] ON THE ANALYTICAL APPROACH TO THE REAL SPACE ELECTRON-TRANSFER IN GAAS-ALGAAS HETEROSTRUCTURES
    MOSKO, M
    NOVAK, I
    QUITTNER, P
    SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 363 - 366
  • [50] MULTIPLE-PHONON RELAXATION IN GAAS-ALGAAS QUANTUM-WELL DOTS
    WANG, PD
    TORRES, CMS
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) : 5047 - 5052
12345