COERCIVITY OF ION-IMPLANTED COBALT FILMS

被引：1

作者：

UNKROTH, A ^{[1
]}

ANDRA, W ^{[1
]}

机构：

[1] ACAD SCI GDR,INST PHYS TECH,DDR-6900 JENA,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 109卷 / 02期

关键词：

Films--Ion Implantation;

D O I：

10.1002/pssa.2211090247

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This note reports on the coercivities of Co-P and Co-Si films produced by phosphorus or silicon ion implantation into Co layers. Experimental results show that the coercivity of Co films can be raised by implantation of a second element. After a succeeding heat treatment the coercivity could be enhanced to a value well above 80 kA/m (1000 Oe).

引用

页码：K149 / K152

页数：4

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