VOLTAGE PERIODIC STRUCTURES IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF A (AL, GA)AS GAAS QUANTUM WELL

被引：2
|
作者：
RICHARD, PG [1 ]
FORTIN, E [1 ]
BEROLO, O [1 ]
机构：
[1] COMMUN RES CTR,OTTAWA K2H 8S2,ONTARIO,CANADA
来源：
SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 01期
关键词：
D O I：
10.1016/0038-1101(90)90015-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The detailed study of voltage periodic structures observed in the NDR region of the forward biased characteristics of an (Al0.3, Ga0.7) As/GaAs quantum well tunnel diode (QWD) is reported. The bias positions of the structures exhibit a temperature dependence in the 5 to 160 K region, similar to that of III-V semiconductor bandgaps. For this temperature range, the periodicity of the structures is found to vary from 2.6 to 1.3 mV. Similar periodic structures are also found in the forward biased photocurrent-voltage (PC-V) characteristics. Analysis of the high frequency oscillations associated with the NDR region of the I-V characteristics shows a clear correspondence between the observed structures in the I-V (and PC-V) characteristics and the conditions of oscillation. © 1990.
引用
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页码：93 / 97
页数：5
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