VOLTAGE PERIODIC STRUCTURES IN THE NEGATIVE DIFFERENTIAL RESISTANCE REGION OF A (AL, GA)AS GAAS QUANTUM WELL

The detailed study of voltage periodic structures observed in the NDR region of the forward biased characteristics of an (Al0.3, Ga0.7) As/GaAs quantum well tunnel diode (QWD) is reported. The bias positions of the structures exhibit a temperature dependence in the 5 to 160 K region, similar to that of III-V semiconductor bandgaps. For this temperature range, the periodicity of the structures is found to vary from 2.6 to 1.3 mV. Similar periodic structures are also found in the forward biased photocurrent-voltage (PC-V) characteristics. Analysis of the high frequency oscillations associated with the NDR region of the I-V characteristics shows a clear correspondence between the observed structures in the I-V (and PC-V) characteristics and the conditions of oscillation. © 1990.