RESIDUAL ALPHA-SI3N4 IN O' CRYSTALS IN CEO2-DOPED O'+BETA' SIALON CERAMICS

被引:4
|
作者
XU, YR [1 ]
HUANG, CM [1 ]
KRIVEN, WM [1 ]
ZANGVIL, A [1 ]
机构
[1] UNIV ILLINOIS, DEPT MAT SCI & ENGN, URBANA, IL 61801 USA
关键词
D O I
10.1111/j.1151-2916.1994.tb07123.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The microstructure of a pressureless sintered (1605-degrees-C, 90 min) O' + beta' SiAlON ceramic with CeO2 doping has been investigated. It is duplex in nature, consisting of very large, slablike elongated O' grains (20-30 mum long), and a continuous matrix of small rodlike beta' grains (< 1.0 mum in length). Many alpha-Si3N4 inclusions (0.1-0.5 mum in size) were found in the large O' grains. CeO2-doping and its high doping level as well as the high Al2O3 concentration were thought to be the main reasons for accelerating the reaction between the alpha-Si3N4 and the Si-Al-O-N liquid to precipitate O'-SiAlON. This caused the supergrowth of O' grains. The rapid growth of O' crystals isolated the remnant alpha-Si3N4 from the reacting liquid, resulting in a delay in the alpha --> beta-Si3N4 transformation. The large O' grains and the alpha-Si3N4 inclusions have a pronounced effect on the strength degradation of O' + beta' ceramics.
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页码:2213 / 2216
页数:4
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