ANNEALING SILICON MONOXIDE FILMS ON ALUMINIUM MIRRORS

被引:9
|
作者
HOLLAND, L
PUTNER, T
BALL, R
机构
来源
BRITISH JOURNAL OF APPLIED PHYSICS | 1960年 / 11卷 / 04期
关键词
D O I
10.1088/0508-3443/11/4/107
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:167 / 168
页数:2
相关论文
共 50 条
  • [41] Silicon carbide formation by annealing C-60 films on silicon
    Moro, L
    Paul, A
    Lorents, DC
    Malhotra, R
    Ruoff, RS
    Lazzeri, P
    Vanzetti, L
    Lui, A
    Subramoney, S
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) : 6141 - 6146
  • [42] Aluminium-surfaced mirrors
    Jones, HS
    NATURE, 1934, 133 : 552 - 553
  • [43] INTERFERENCE MIRRORS ON THE ALUMINIUM BASE
    TARASOV, KI
    OPTIKA I SPEKTROSKOPIYA, 1959, 6 (01): : 94 - 96
  • [44] Effect of annealing temperature on the optical properties of nanosilicon produced from silicon monoxide
    Dorofeev, S. G.
    Ischenko, A. A.
    Kononov, N. N.
    Fetisov, G. V.
    CURRENT APPLIED PHYSICS, 2012, 12 (03) : 718 - 725
  • [45] Poly-silicon thin films by aluminium induced crystallisation of microcrystalline silicon
    Ekanayake, G.
    Reehal, H. S.
    VACUUM, 2006, 81 (03) : 272 - 278
  • [46] Polycrystalline silicon films fabricated by rapid thermal annealing
    Zhang, Lei
    Shen, Honglie
    You, Jiayi
    Jiang, Feng
    Wu, Tianru
    Tang, Zhengxia
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2012, 23 (07) : 1279 - 1283
  • [47] Annealing temperature effect on the aluminium doped ZnO films for transparent electronics
    Shelke, V.
    Sonawane, B. K.
    Bhole, M. P.
    Patil, D. S.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2008, 2 (10): : 666 - 668
  • [48] Polycrystalline silicon films fabricated by rapid thermal annealing
    Lei Zhang
    Honglie Shen
    Jiayi You
    Feng Jiang
    Tianru Wu
    Zhengxia Tang
    Journal of Materials Science: Materials in Electronics, 2012, 23 : 1279 - 1283
  • [49] THERMAL ANNEALING EFFECTS OF PLASMA CVD SILICON FILMS
    AOYAMA, T
    ADACHI, E
    YOSHIMURA, M
    NAKAMURA, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C105 - C105