EFFECTS OF ELECTRON-BOMBARDMENT ON NOISE IN JUNCTION GATE FIELD-EFFECT TRANSISTORS

被引：3

作者：

KRISHNAN, IN ^{[1
]}

CHEN, TM ^{[1
]}

机构：

[1] UNIV S FLORIDA,DEPT ELECT & ELECTR SYST,TAMPA,FL 33620

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 11期

关键词：

D O I：

10.1016/0038-1101(73)90078-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1233 / 1240

页数：8

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