REVIEW OF RIE INDUCED RADIATION-DAMAGE IN SILICON DIOXIDE

被引：0
|
作者：
EPHRATH, LM
DIMARIA, DJ
机构：
来源：
SOLID STATE TECHNOLOGY | 1981年 / 24卷 / 04期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：182 / 188
页数：7
相关论文
共 50 条
  • [21] TEMPERATURE EFFECTS ON RADIATION-DAMAGE TO SILICON DETECTORS
    BARBERIS, E
    BOISSEVAIN, JG
    CARTIGLIA, N
    ELLISON, JA
    FERGUSON, P
    FLEMING, JK
    HOLZSCHEITER, K
    JERGER, S
    JOYCE, D
    KAPUSTINSKY, JS
    LESLIE, J
    LIETZKE, C
    MATTHEWS, JAJ
    PALOUNEK, APT
    PITZL, D
    ROWE, WA
    SADROZINSKI, HFW
    SKINNER, D
    SOMMER, WF
    SONDHEIM, WE
    WIMPENNY, SJ
    ZIOCK, HJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2): : 373 - 380
  • [22] RADIATION-DAMAGE TO SURFACE-LAYERS OF SILICON
    VOLOGDIN, EN
    ZHUKOVA, GA
    MORDKOVICH, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (04): : 572 - 572
  • [23] RECENT RESULTS OF RADIATION-DAMAGE STUDIES IN SILICON
    BATES, SJ
    MUNDAY, DJ
    PARKER, MA
    ANGHINOLFI, F
    CHILINGAROV, A
    CIASNOHOVA, A
    GLASER, M
    HEIJNE, E
    JARRON, P
    LEMEILLEUR, F
    SANTIARD, JC
    BONINO, R
    CLARK, AG
    KAMBARA, H
    GOSSLING, C
    LISOWSKI, B
    ROLF, A
    PILATH, S
    FEICK, H
    FRETWURST, E
    LINDSTROM, G
    SCHULZ, T
    BARDOS, RA
    GORFINE, GW
    MOORHEAD, GF
    TAYLOR, GN
    TOVEY, SN
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1994, 344 (01): : 228 - 236
  • [24] RADIATION-DAMAGE COEFFICIENTS FOR SILICON DEPLETION REGIONS
    SROUR, JR
    CHEN, SC
    OTHMER, S
    HARTMANN, RA
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) : 4784 - 4791
  • [25] NEUTRON RADIATION-DAMAGE STUDIES OF SILICON DETECTORS
    EDWARDS, M
    HALL, G
    SOTTHIBANDHU, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1991, 310 (1-2): : 283 - 286
  • [26] PROFILES OF RADIATION-DAMAGE AND IMPLANTED BORON IN SILICON
    DIKII, NP
    MATYASH, PP
    SKAKUN, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (03): : 395 - 396
  • [27] SPECTROSCOPY OF RADIATION-DAMAGE IN SILICON MIS STRUCTURES
    PRIKHODKO, VG
    ZHDAN, AG
    GALKIN, GN
    ABBASOVA, RU
    BOBROVA, EA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 808 - 809
  • [28] RADIATION-DAMAGE TEST OF SILICON MULTISTRIP DETECTORS
    NAKAMURA, M
    TOMITA, Y
    NIWA, K
    KONDO, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 270 (01): : 42 - 55
  • [29] RELAXATION OF RADIATION-DAMAGE IN SILICON PLANAR DETECTORS
    SCHMIDT, B
    EREMIN, V
    IVANOV, A
    STROKAN, N
    VERBITSKAYA, E
    LI, Z
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) : 4072 - 4076
  • [30] NEUTRON-INDUCED RADIATION-DAMAGE
    WILLIAMS, MMR
    ATOMKERNENERGIE, 1977, 29 (01): : 33 - 37
12345