PREPARATION AND CHARACTERIZATION OF HETEROJUNCTION SOLAR-CELLS OF SNO2P/N-SI (TEXTURED) BY CHEMICAL VAPOR-DEPOSITION TECHNIQUE

SnO2:P/n-Si (textured) heterojunction solar cells, having AMI efficiency of 11.0% on single silicon crystal, have been fabricated. The phosphorous doped tin oxide films are deposited by chemical vapour deposition technique on heated silicon substrate having resistivity 1.0 X 10(-3) ohm-m. Before the deposition of SnO2:P, the wafers were textured and growth Of SiO2 layer On Si Surface was avoided. The C-V measurement at 1 kHz frequency shows the abrupt nature of the junction with built-in voltage V(d) = 0.62 V. The variation of cell parameters with temperature have also been studied.