BONDING OF CS ON SI-SURFACE AND GE-SURFACE STUDIED BY CORE-LEVEL SPECTROSCOPY

被引：26

作者：

LIN, DS ^{[1
]}

MILLER, T ^{[1
]}

CHIANG, TC ^{[1
]}

机构：

[1] UNIV ILLINOIS,CONTROL ENGN LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.44.10719

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The core-level line shapes of Si(111)-(7 X 7), Si(100)-(2 X 1), and Ge(100)-(2 X 1) are examined with synchrotron-radiation photoemission both before and after Cs adsorption. The Cs-induced core-level shifts are determined. The results indicate that the chemisorption bond is partially ionic, and the Si or Ge surface atoms each have an extra charge of about 0.3 electron after Cs adsorption.

引用

页码：10719 / 10723

页数：5

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