NOISE AND DISTORTION CONSIDERATIONS IN CHARGE-COUPLED DEVICES

被引：11
|
作者：
BARBE, DF
机构：
来源：
ELECTRONICS LETTERS | 1972年 / 8卷 / 08期
关键词：
D O I：
10.1049/el:19720150
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：207 / &
相关论文
共 50 条
  • [11] Charge-Coupled Devices with Compensated Charge Transfer
    Arutyunov V.A.
    Sorokin O.V.
    Russian Microelectronics, 2000, 29 (2) : 104 - 105
  • [12] Charge transfer modeling for charge-coupled devices
    Lavine, JP
    Stevens, EG
    Banghart, EK
    Trabka, EA
    Burkey, BC
    Schneider, DJ
    SEMICONDUCTOR PROCESS AND DEVICE PERFORMANCE MODELLING, 1998, 490 : 251 - 256
  • [13] Echelle spectrometers and charge-coupled devices
    BeckerRoss, H
    Florek, SV
    SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY, 1997, 52 (9-10) : 1367 - 1375
  • [14] Radiation damage in charge-coupled devices
    Bassler, Niels
    RADIATION AND ENVIRONMENTAL BIOPHYSICS, 2010, 49 (03) : 373 - 378
  • [15] Charge-coupled devices in infrared imaging
    Mooney, Jon
    Optics and Photonics News, 1995, 6 (04): : 29 - 31
  • [16] NEW STRUCTURES FOR CHARGE-COUPLED DEVICES
    SCHUERMEYER, FL
    BELT, RA
    YOUNG, CR
    BLASINGA.JM
    PROCEEDINGS OF THE IEEE, 1972, 60 (11) : 1444 - 1445
  • [17] The latent imager [charge-coupled devices]
    Williamson, Mark
    Engineering and Technology, 2009, 4 (14): : 36 - 39
  • [18] Proton effects in charge-coupled devices
    Hopkinson, GR
    Dale, CJ
    Marshall, PW
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) : 614 - 627
  • [19] INTERLACING IN CHARGE-COUPLED IMAGING DEVICES
    SEQUIN, CH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (06) : 535 - 541
  • [20] Radiation damage in charge-coupled devices
    Niels Bassler
    Radiation and Environmental Biophysics, 2010, 49 : 373 - 378
12345