TRANSIENT PHENOMENA IN ION SENSITIVE FIELD-EFFECT TRANSISTORS

被引：17

作者：

SMITH, RL ^{[1
]}

JANATA, J ^{[1
]}

HUBER, RJ ^{[1
]}

机构：

[1] UNIV UTAH,DEPT ELECT ENGN,SALT LAKE CITY,UT 84112

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 07期

关键词：

D O I：

10.1149/1.2129960

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1599 / 1603

页数：5

共 50 条

[1] ON THE APPLICATION OF ION SENSITIVE FIELD-EFFECT TRANSISTORS FOR THE INVESTIGATION OF CORROSION PHENOMENA
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[2] Advance of ion-sensitive field-effect transistors
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[3] EQUILIBRIUM NOISE IN ION SENSITIVE FIELD-EFFECT TRANSISTORS
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[4] ELECTROSTATICALLY PROTECTED ION SENSITIVE FIELD-EFFECT TRANSISTORS
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[5] ION-SENSITIVE FIELD-EFFECT TRANSISTORS AND RELATED DEVICES
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ITO, N
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[8] BIOSENSORS WITH FLUORIDE-ION SENSITIVE FIELD-EFFECT TRANSISTORS
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[9] SELECTIVITY AND TEMPERATURE CHARACTERISTICS OF ION SENSITIVE FIELD-EFFECT TRANSISTORS
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[10] CHEMICALLY SENSITIVE FIELD-EFFECT TRANSISTORS
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