INTERSTITIAL CHROMIUM BEHAVIOR IN SILICON DURING RAPID THERMAL ANNEALING

被引：5
|
作者：
ZHU, J
BARBIER, D
MAYET, L
GAVAND, M
CHAUSSEMY, G
机构：
来源：
APPLIED SURFACE SCIENCE | 1989年 / 36卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(89)90937-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：413 / 420
页数：8
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