INELASTIC RESONANT-TUNNELING IN AMORPHOUS-SILICON MICROSTRUCTURES

被引：1
|
作者：
YAKIMOV, AI
STEPINA, NP
DVURECHENSKII, AV
机构：
[1] Institute of Semiconductor Physics
来源：
PHYSICS LETTERS A | 1994年 / 194卷 / 1-2期
关键词：
D O I：
10.1016/0375-9601(94)00700-Y
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have observed strong electron-phonon interaction on deep centers in the process of resonant tunneling conduction through localized states in amorphous silicon. Our data support the theory of Glazman and Matveev pertaining to inelastic resonant tunneling in mmesoscopic junctions.
引用
收藏
页码：133 / 136
页数：4
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