INFLUENCE OF DEFECTS ON THE CRITICAL FIELD OF THE SUPERCONDUCTING NUCLEATION

被引：2

作者：

Simonov, A. Yu ^{[1
]}

Melnikov, A. S. ^{[2
]}

Sharov, S. V. ^{[2
]}

机构：

[1] Moscow State Univ, USSR, Dept Phys, Lab High T Supercond, Moscow 117234, Russia

[2] USSR, Inst Appl Phys, Gorki 603000, Russia

来源：

MODERN PHYSICS LETTERS B | 1990年 / 4卷 / 19期

关键词：

D O I：

10.1142/S0217984990001525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the existence of planar defects near the surface of a superconductor or crystal edges lead to an increase of the surface superconductivity nucleation field as compared with its usual H-c3 = 1.695H(c2) value.

引用

页码：1211 / 1214

页数：4

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