user

INFLUENCE OF MOBILE DEFECTS ON THE CHARACTERISTICS OF A METAL-SEMICONDUCTOR CONTACT IN THE CASE OF CDS CRYSTALS

被引：0
|
作者：
DROZDOVA, IA
EMBERGENOV, B
KORSUNSKAYA, NE
MARKEVICH, IV
机构：
来源：
SEMICONDUCTORS | 1993年 / 27卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Characteristics of electrical contacts with CdS crystals containing mobile defects were found to change with time. An ohmic contact deteriorates while the resistance of a nonohmic (rectifying) contact and the photo-emf across the latter fall due to the drift of mobile defects in the field of either an accumulation- or depletion-type band bending created by the contact electrode.
引用
收藏
页码：372 / 373
页数：2
相关论文
共 50 条
  • [31] SIMULATION OF RESIDUAL PHOTOCONDUCTIVITY AT A METAL-SEMICONDUCTOR CONTACT
    KYAZYMZADE, AG
    AKHMEDOV, AA
    KHALILOV, SK
    BAIRAMOV, YA
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1988, 108 (02): : 619 - 623
  • [32] SYSTEM FOR THE FABRICATION OF METAL-SEMICONDUCTOR CONTACT.
    Qidwai, A.A.
    Ali, S.T.
    Rukh, M.
    Mehran University research journal of engineering and technology, 1988, 7 (01) : 12 - 14
  • [33] Determination of contact resitance in metal-semiconductor structure
    Cheknane, A
    Charles, JP
    Benyoucef, B
    Zerdoum, R
    2004 IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL TECHNOLOGY (ICIT), VOLS. 1- 3, 2004, : 322 - 327
  • [34] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
    CHANG, CY
    FANG, YK
    SZE, SM
    SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &
  • [35] ISSUES IN METAL-SEMICONDUCTOR CONTACT DESIGN AND IMPLEMENTATION
    NICOLET, MA
    KOLAWA, E
    MOLARIUS, J
    SOLAR CELLS, 1989, 27 (1-4): : 177 - 189
  • [36] Study of the metal-semiconductor contact to ZnO films
    Yan, Yu
    Mi, Wei
    Zhao, Jinshi
    Yang, Zhengchun
    Zhang, Kailiang
    Luan, Chongbiao
    VACUUM, 2018, 155 : 210 - 213
  • [37] THE THEORY OF RECTIFICATION AND INJECTION AT A METAL-SEMICONDUCTOR CONTACT
    GUNN, JB
    PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1954, 67 (415): : 575 - 581
  • [38] Influence of Schottky metal-semiconductor contact on the responsivity of UV photodetectors with internal gain
    Zhou, Xuan
    Jiang, Dayong
    Zhao, Man
    Duan, Yuhan
    Wang, Nan
    Shan, Chuncai
    Li, Qian
    Li, Meng
    Fei, Xiaomiao
    Zhao, Xinjing
    EUROPEAN PHYSICAL JOURNAL D, 2020, 74 (06):
  • [39] ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR JUNCTIONS
    SCHNEIDER, MV
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (11) : 1169 - 1173
  • [40] Metal-semiconductor nanojunctions and their rectification characteristics
    Anindita Bose
    Kuntal Chatterjee
    Dipankar Chakravorty
    Bulletin of Materials Science, 2009, 32 : 227 - 230
12345