INFLUENCE OF MOBILE DEFECTS ON THE CHARACTERISTICS OF A METAL-SEMICONDUCTOR CONTACT IN THE CASE OF CDS CRYSTALS

被引：0
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作者：
DROZDOVA, IA
EMBERGENOV, B
KORSUNSKAYA, NE
MARKEVICH, IV
机构：
来源：
SEMICONDUCTORS | 1993年 / 27卷 / 04期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Characteristics of electrical contacts with CdS crystals containing mobile defects were found to change with time. An ohmic contact deteriorates while the resistance of a nonohmic (rectifying) contact and the photo-emf across the latter fall due to the drift of mobile defects in the field of either an accumulation- or depletion-type band bending created by the contact electrode.
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页码：372 / 373
页数：2
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