PREPARATION AND ANALYSIS OF THE NEGATIVE-RESISTANCE CHARACTERISTIC IN AN AMORPHOUS-SILICON AND SILICON-CARBIDE SINGLE-BARRIER DEVICE

被引：2
|
作者：
CHEN, KH [1 ]
FANG, YK [1 ]
SHIEH, KH [1 ]
LIOU, WR [1 ]
机构：
[1] NATL TAIWAN OCEAN UNIV,DEPT ELECT ENGN,CHILUNG,TAIWAN
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 22期
关键词：
D O I：
10.1063/1.112575
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The characteristics of negative differential resistance in an amorphous silicon and silicon-carbide single-barrier device have been experimentally observed at room temperature. Based on the calculated and measured results, the barrier thickness is the important factor in determining the current-voltage characteristics of this device. In addition, the effective mass and the series resistance of amorphous materials are larger than that of crystalline materials. Thus the behavior of negative differential resistance of an amorphous silicon single-barrier device would be different from that of single-crystalline devices. © 1994 American Institute of Physics.
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页码：2815 / 2817
页数：3
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