REALIZATION OF AN IN-PLANE-GATE SINGLE-ELECTRON TRANSISTOR

被引：17

作者：

POTHIER, H ^{[1
]}

WEIS, J ^{[1
]}

HAUG, RJ ^{[1
]}

VONKLITZING, K ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] PAUL DRUDE INST FESTKORPERELEKTR, O-1086 BERLIN, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By etching narrow trenches in an AlGaAs/GaAs heterostructure and defining a channel and six in-plane gates in the two-dimensional electron gas, a single-electron transistor is produced in a simple way. As expected from charging effects, the conductivity of the transistor oscillates with the voltage on each gate. However, in contrast to metallic devices or heterostructure devices with metallic top gates, the voltage dependent depletion of the gates themselves leads to changes in the period of the oscillations.

引用

页码：3174 / 3176

页数：3

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