MAIN-FIELD STITCHING ACCURACY ANALYSIS IN ELECTRON-BEAM WRITING SYSTEMS

被引:4
|
作者
ANZE, H
TAMAMUSHI, S
NISHIMURA, E
OGAWA, Y
TAKIGAWA, T
机构
[1] ULSI Research Center, Toshiba Corporation, Kawasaki, 210, Komukai Toshiba-cho
关键词
MAIN-FIELD; FRAME; STITCHING ACCURACY; DISTORTION; POSITIONING ERROR; EVALUATION METHOD; CONTAMINATION; CHARGING; DEFLECTOR CALIBRATION;
D O I
10.1143/JJAP.31.4248
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new evaluation method for main-field positioning error for electron beam (E-Beam) writing systems has been developed. Main-field distortion caused by system-based main-field positioning error such as contamination charging, deflector calibration error, substrate height error and so on is the main factor impairing accuracy in E-Beam writing systems. Main-field distortion after elimination of deflection distortion is classified into four modes. The origin of main-field positioning error can be estimated by investigating the behavior of these four modes of main-field distortion. This method has been applied to the variable shaped beam (VSB), vector scanning, and continuously moving stage E-Beam system. Contamination charging problems in the final lens surface in opposition to substrate and problems in the deflector calibration method have been found. Main-field positioning error of the E-Beam system decreased from 0. 1 mum to 0.04 mum after solving the above problems. The evaluation method for main-field positioning error has been proved to be very effective in accuracy improvement of E-Beam systems.
引用
收藏
页码:4248 / 4252
页数:5
相关论文
共 50 条
  • [21] ELECTRON-BEAM BLANKING SYSTEMS
    FUJIOKA, H
    URA, K
    SCANNING, 1983, 5 (01) : 3 - 13
  • [22] Writing strategy and electron-beam system with an arbitrarily shaped beam
    Babin, S
    24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2, 2004, 5567 : 301 - 307
  • [23] Fabrication of Beam Sampling Gratings with Electron-Beam direct writing
    Gao, FH
    Zeng, YS
    Xie, SW
    Gao, F
    Yao, J
    Guo, YK
    Du, JL
    Cui, Z
    PRACTICAL HOLOGRAPHY XVI AND HOLOGRAPHIC MATERIALS VIII, 2002, 4659 : 413 - 419
  • [24] Writing strategy and electron-beam system with an arbitrarily shaped beam
    Babin, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 3543 - 3546
  • [25] DEVELOPMENT OF POSITIVE ELECTRON-BEAM RESIST FOR 50 KV ELECTRON-BEAM DIRECT-WRITING LITHOGRAPHY
    SAKAMIZU, T
    YAMAGUCHI, H
    SHIRAISHI, H
    MURAI, F
    UENO, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2812 - 2817
  • [26] WIDENING FIELD OF APPLICATION OF ELECTRON-BEAM
    不详
    MACHINERY AND PRODUCTION ENGINEERING, 1972, 120 (3088): : 73 - &
  • [27] FIELD PATCHING FOR ELECTRON-BEAM THERAPY
    PRASAD, SG
    SHERWOOD, G
    LEVAN, JH
    PHYSICS IN MEDICINE AND BIOLOGY, 1972, 17 (06): : 876 - &
  • [28] FOCUSING FIELD OF AN ELECTRON-BEAM BUNCHER
    ISLAMOV, BI
    KAKURINA, NA
    RADYUK, GA
    RASULOV, EN
    RADIOTEKHNIKA I ELEKTRONIKA, 1991, 36 (07): : 1316 - 1320
  • [29] FIELD SHAPING IN ELECTRON-BEAM THERAPY
    KHAN, FM
    MOORE, VC
    LEVITT, SH
    BRITISH JOURNAL OF RADIOLOGY, 1976, 49 (586): : 883 - 886
  • [30] AN ACCURATE ANALYSIS OF DIRECTIONAL-COUPLERS TYPICAL OF ELECTRON-BEAM WRITING TECHNIQUES
    TEWARI, R
    KUMAR, A
    THYAGARAJAN, K
    OPTICS COMMUNICATIONS, 1986, 58 (02) : 95 - 99