HIGH-EFFICIENCY ZN-DIFFUSED GAAS ELECTROLUMINESCENT DIODES

被引：57
|
作者：
HERZOG, AH
KEUNE, DL
CRAFORD, MG
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 02期
关键词：
D O I：
10.1063/1.1661164
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：600 / &
相关论文
共 50 条
  • [41] Compositional characterisation of Zn-diffused lithium niobate waveguides
    Nevado, R
    Sada, C
    Segato, F
    Caccavale, F
    Kling, A
    Soares, JC
    Cantelar, E
    Cussó, F
    Lifante, G
    APPLIED PHYSICS B-LASERS AND OPTICS, 2001, 73 (5-6): : 555 - 558
  • [42] Compositional characterisation of Zn-diffused lithium niobate waveguides
    R. Nevado
    C. Sada
    F. Segato
    F. Caccavale
    A. Kling
    J.C. Soares
    E. Cantelar
    F. Cussó
    G. Lifante
    Applied Physics B, 2001, 73 : 555 - 558
  • [43] HIGH-ENERGY EMISSION IN GAAS ELECTROLUMINESCENT DIODES
    NATHAN, MI
    MORGAN, TN
    BURNS, G
    MICHEL, AE
    PHYSICAL REVIEW, 1966, 146 (02): : 570 - &
  • [44] Structural characterization of vapour Zn-diffused waveguides in lithium niobate
    Moscow Inst of Electronic Technology, , Moscow, Russia
    J Cryst Growth, 1 (94-100):
  • [45] COMPARISON OF GAMMA-IRRADIATION-INDUCED DEGRADATION IN AMPHOTERICALLY SI-DOPED GAAS LEDS AND ZN-DIFFUSED GAAS LEDS
    BARNES, CE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (05) : 739 - 745
  • [46] INJECTION MECHANISMS IN GAAS DIFFUSED ELECTROLUMINESCENT JUNCTIONS
    LEITE, RCC
    SARACE, JC
    OLSON, DH
    COHEN, BG
    WHELAN, JM
    YARIV, A
    PHYSICAL REVIEW, 1965, 137 (5A): : 1583 - &
  • [47] HIGH-EFFICIENCY SINGLE-DRIFT GAAS IMPATT DIODES FOR 72 GHZ
    ZHANG, X
    FREYER, J
    ELECTRONICS LETTERS, 1984, 20 (18) : 752 - 754
  • [48] SHAPED ELECTROLUMINESCENT GAAS DIODES
    FRANKLIN, AR
    NEWMAN, R
    JOURNAL OF APPLIED PHYSICS, 1964, 35 (04) : 1153 - &
  • [49] EPITAXIAL GAAS ELECTROLUMINESCENT DIODES
    PIQUERAS, J
    MENDEZ, E
    FERNANDE.A
    MUNOZ, E
    ANALES DE FISICA, 1974, 70 (01): : 106 - 109
  • [50] SEMI-CYLINDRICAL ZN-DIFFUSED STRIPE GAAIAS LASER-DIODES WITH VERY LOW THRESHOLD CURRENTS
    HANAMITSU, K
    OHSAKA, S
    YOSHIDA, K
    NISHI, H
    HORI, K
    TAKUSAGAWA, M
    ELECTRONICS LETTERS, 1982, 18 (19) : 853 - 855
12345