Sensing Properties of Ga-doped ZnO Nanowire Gas Sensor

被引：8

作者：

Lee, Sang Yeol ^{[1
]}

机构：

[1] Cheongju Univ, Dept Semicond Engn, Cheongju 360764, South Korea

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2015年 / 16卷 / 02期

关键词：

Metal-oxide-semiconductor field-effect transistor; lateral asymmetric channel doping; transconductance; on-state drain current; channel-hot-carrier degradation;

D O I：

10.4313/TEEM.2015.16.2.78

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pure ZnO and ZnO nanowires doped with 3 wt.% Ga ('3GZO') were grown by pulsed laser deposition in a furnace system. The doping of Ga in ZnO nanowires was analyzed by observing the optical and chemical properties of the doped nanowires. The diameter and length of nanowires were under 200 nm and several mu m, respectively. Changes of significant resistance were observed and the sensitivities of ZnO and 3GZO nanowires were compared. The sensitivities of ZnO and 3GZO nanowire sensors measured at 300 degrees C for 1 ppm of ethanol gas were 97% and 48%, respectively.

引用

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页码：78 / 81

页数：4

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